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3D XPoint : ウィキペディア英語版
3D XPoint
3D XPoint, (pronounced ''three dee cross point'') is a non-volatile memory technology announced by Intel and Micron in July 2015. Though details of the materials and physics of operation were not disclosed, storage density is claimed to be similar to flash memory,〔(【引用サイトリンク】title=Intel, Micron reveal Xpoint, a new memory architecture that could outclass DDR4 and NAND - ExtremeTech )〕〔(【引用サイトリンク】title=2015: 3D XPoint Technology )〕 durability better and operating speed faster than flash memory though slower than dynamic RAM. Bit storage is based on a change of bulk resistance, in conjunction with a stackable cross-gridded data access array.

== History ==
Development of 3D XPoint began around 2005.〔 Intel and Micron had developed other non-volatile phase-change memory (PCM) technologies previously; Mark Durcan of Micron said 3D XPoint architecture differs from previous offerings of PCM, and uses materials that are faster and more stable. An unnamed commentator from marketing also denied that 3D XPoint uses a phase-change or memristor technology.

抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)
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